Innovative 4-lead package of latest MDmesh(TM) V Super-Junction MOSFETs adds dedicated control input for increased switching efficiency
Geneva, May 6, 2013 - STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has introduced the first MDmesh(TM) V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies.
The new TO247-4 4-lead package (http://www.st.com/to247-4-pr) provides a direct source connection used only for switching control, whereas conventional packages provide one connection for both switching and power. The extra lead increases switching efficiency, which reduces energy losses and allows higher-frequency operation for more compact power supplies.
ST co-developed the package with Infineon, which is also introducing its own new Super-Junction devices, providing second-source flexibility for users. "The TO247-4 is highly cost-effective and requires only minimal modification of the PCB layout when replacing a standard TO-247 device, which simplifies adoption in power systems," commented Maurizio Giudice, Marketing Director, Power Transistor (http://www.st.com/transistor-pr) Division, STMicroelectronics. "Our new MDmesh devices using this package will enable better environmental performance of end equipment by improving energy efficiency in active modes."
The TO247-4 package (http://www.st.com/to247-4-pr) features an innovative internal construction implementing a Kelvin connection to the source. This connection bypasses the common source inductance of the main power connection, enabling up to 60% of switching losses to be eliminated and allowing designers to use higher switching frequencies that require smaller filtering components. Combining this new package with ST's MDmesh Super-Junction technology (http://www.st.com/mdmeshv-pr), which achieves one of the highest conduction efficiencies per silicon area, delivers the best possible overall energy savings.
The device introduced today is the STW57N65M5-4 (http://www.st.com/stw57n65m5-4-pr). As the first MDmesh device released in the TO247-4, it will enable increased energy efficiency in active Power-Factor Correction (PFC) circuits and full-bridge or half-bridge power converters for a wide variety of consumer and industrial electronic products.
Additional features of STW57N65M5-4 in TO247-4:
- High noise immunity, lowering susceptibility to Electro-Magnetic Interference (EMI)
- Increased voltage rating for greater safety margins
- High dv/dt capability for enhanced reliability
- 100% avalanche tested, enabling use in rugged designs
The STW57N65M5-4 (http://www.st.com/stw57n65m5-4-pr) is in mass production now, priced from $10.00 for orders over 1,000 pieces.
For further information please refer to http://www.st.com/to247-4-pr (http://www.st.com/to247-4-pr)
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the spectrum of sense and power and automotive products and embedded processing solutions. From energy management and savings to trust and data security, from healthcare and wellness to smart consumer devices, in the home, car and office, at work and at play, ST is found everywhere microelectronics make a positive and innovative contribution to people's life. By getting more from technology to get more from life, ST stands for life.augmented.
In 2012, the Company's net revenues were $8.49 billion. Further information on ST can be found at www.st.com (http://www.st.com/).
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ST MDMesh MOSFET in TO-247 (http://hugin.info/152740/R/1699392/560560.pdf)
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Source: STMicroelectronics via Thomson Reuters ONE
