The cell was built with a phosphorus-doped n-type Czochralski (Cz) silicon wafer with a resistivity of 1.09?cm and a thickness of 170mm. Ti/Au/Ag metal stacks were used for the contact with the hydrogenated amorphous silicon (a-Si:H) layers.Scientists at Germany's research center Forschungszentrum Juelich GmbH have fabricated a heterojunction silicon solar cell without transparent conductive oxides (TCOs) at the front contact. TCOs are materials that show both transparent and conducting properties and have been used for decades in both sides of contacted crystalline silicon (c-Si) heterojunction ...Den vollständigen Artikel lesen ...
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