Japanese researchers have built an InGap-GaAs-CIGS solar cell that purportedly has the potential to reach an efficiency of 35%. The device has already achieved an efficiency of 31.0%, an open-circuit voltage of 2.97 V, a short-circuit current density of 12.41 mA/cm2, and a fill factor of 0.80.Researchers led by Japan's National Institute of Advanced Industrial Science and Technology (AIST) have fabricated a three-junction solar cell based on indium gallium phosphide (InGaP), gallium arsenide (GaAS) and copper, indium, gallium and selenium (CIGS) with a mechanical stacked design. "We are currently ...Den vollständigen Artikel lesen ...
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