Researchers at Nanchang Hangkong University in China have developed a dual silicon oxide (SiO?) diffusion barrier strategy to improve the efficiency of tunnel oxide passivated contact (TOPCon) solar cells. The approach combines post-plasma oxidation with tunnel oxide optimization to control the depth distribution of electrically active phosphorus and the microstructure of polysilicon (poly-Si). "Conventional industrial TOPCon optimization mainly focuses on adjusting the total phosphorus dose or tunnel oxide quality, without independently controlling the position of the electrically active phosphorus ...Den vollständigen Artikel lesen ...
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