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Aktuelle News von Semiconductor Today

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  • letzte 200 News
ZeitAktuelle Nachrichten
10.07.AXT reduces Q2 revenue guidance from $20-22m to $17.5-18m
09.07.Singapore opens NSTIC (GaN), first national facility for gallium nitride
09.07.Phlux makes available evaluation board for Aura Noiseless InGaAs APDs
09.07.Dhruva's Solis+ space-grade solar panels to be used by Pixxel
08.07.Unipress orders Taiyo Nippo Sanso MOCVD platforms
07.07.Wolfspeed appoints former NXP and ams OSRAM executive Gregor van Issum as CFO
04.07.National Research Council of Canada signs MoU with Quebec's C2MI and UK's CSA Catapult
03.07.Improving mobility in InAs quantum wells on GaAs substrate
03.07.Aixtron leading project to increase energy efficiency in SiC layer deposition
03.07.TSMC to cease GaN foundry production by end-July 2027 due to price pressure from Chinese rivals
03.07.Mouser enters distribution agreement with Ampleon
03.07.Go Maruyama becomes pSemi's CEO as Tatsuo Bizen retires
03.07.Infineon on track to ship customer samples of GaN on 300mm wafers in Q4/2025
02.07.Navitas plans 200mm GaN production with PSMC
01.07.Wavetek deploys Silvaco's Victory TCAD for GaN-based device development
01.07.NUBURU reports progress in acquisition of Tekne as part of Defense & Security Hub
01.07.Wolfspeed files for Chapter 11 bankruptcy as part of financial restructuring
30.06.Pragmatic appoints John Quigley as executive VP of Engineering
30.06.CSconnected names first recipients for £1m Supply Chain Development Programme
30.06.US-based GlobalFoundries investing extra $3bn for R&D on silicon photonics, advanced packaging and GaN
30.06.III-V Epi brings independent, epi manufacturing expertise to Glasgow's Critical Technologies Accelerator program
30.06.UIUC reveals 'efficiency cliff' when LEDs are scaled to submicron dimensions
27.06.SuperLight unveils light source for high-performance spectroscopy
26.06.AlYN-barrier GaN HEMTs for next generation devices
26.06.Wise Integration launches first digital controller for GaN totem-pole PFC