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Aktuelle News von Semiconductor Today

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  • letzte 200 News
ZeitAktuelle Nachrichten
DiMicroLink Devices UK awarded in Call 2 of CSconnected Supply Chain Development Programme
DiFuji Electric and Robert Bosch collaborate on SiC power semiconductor modules for EVs
Moams OSRAM announces partial repurchase offer for up to €300m of outstanding convertible bonds due 2027
MoIII-V Lab delivers photonics training on 'Digital Infrastructures' and 'Safety, Security & Space'
19.12.Leonardo to develop and deliver first four Italian next-gen radars for Michelangelo Dome long-range ballistic defence system
19.12.Lumileds launches LUXEON Versat 2016 AEC-Q qualified LEDs
19.12.AlixLabs appoints Arthur van der Poel to advisory board
19.12.onsemi to develop power devices using GlobalFoundries' 200mm lateral GaN-on-Si
18.12.Quasi-vertical selective area growth GaN diode on silicon
18.12.Power SiC faces overcapacity downturn until 2027-2028, before device market grows to nearly $10bn by 2030
18.12.CGD wins Hyundai Open Innovation challenge
17.12.NUBURU secures $25m financing to complete acquisitions
17.12.RENA joins UK-funded consortium to strengthen national semiconductor metrology capabilities
17.12.NHanced supporting mixed-material heterogeneous hybrid bonding production with copper or nickel bonds
16.12.IDTechEx assesses status of 800V for EVs
16.12.Lumentum appoints onsemi's CFO Thad Trent to board
15.12.CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration
15.12.Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap
15.12.NTT reports first RF operation of AlGaN transistors with Al-content over 0.75
15.12.CHIPX to establish 8-inch GaN-on-SiC wafer fab in Malaysia
12.12.Advanced Energy unveils dual-output 400W module for NeoPower configurable power supplies
12.12.Navitas expands global distribution network with Avnet
11.12.Patterning GaN for improved red LEDs
11.12.Wise Integration, Powernet and KEC sign MoU to co-develop SMPS solutions for AI server power supplies in Korea
11.12.Cornell develops HEMTs on single-crystal AlN substrate for RF power amplifiers