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- letzte 200 News
| Zeit | Aktuelle Nachrichten | ||
|---|---|---|---|
| Di | Enkris unveils high-speed, low-power micro-LED optical interconnect product | ||
| Di | Element Six and Orbray accelerate wafer-scale single-crystal diamond for volume production | ||
| Di | PicoJool introduces 200G VCSELs for scale-up AI data centers | ||
| Mo | CGD and NXP collaborate to accelerate time to market | ||
| Mo | Wolfspeed appoints Daniel Whalen as VP of investor relations | ||
| Mo | IQE and Tower announce multi-year InP epiwafer supply agreement | ||
| Mo | NUBURU agrees Lyocon-led alliance with SunCubes | ||
| Mo | KnowMade highlights scaling of GaN-based architectures for strategic markets | ||
| Mo | China's Supreme Court upholds injunction against Infineon, says Innoscience | ||
| Mo | Fraunhofer ISE raises its solar module efficiency record to 34.4% | ||
| Fr | Micro-LED transfer via electrochemical etch | ||
| Fr | Photon Design adds silicon modulator design capability to its HAROLD laser simulation tool | ||
| Fr | Guerrilla RF launches flagship linear PA module for 4.4-5.2GHz band | ||
| Fr | Volta Metals awarded up to $500,000 from Ontario's Critical Minerals Innovation Fund | ||
| Do | Nimy and Curtin University awarded funding for gallium processing research in Western Australia | ||
| Do | Veeco's new LUMINA+ MOCVD system qualified by Ennostar | ||
| Do | Imec adds high-density MIMCAPs, passive modeling and laser-assisted bonding to 300mm RF silicon interposer platform | ||
| Do | Northrop Grumman develops market-ready GaN chip for W-band RF in under six months | ||
| 10.06. | ROHM partners with Aixtron to establish in-house GaN epi | ||
| 10.06. | EPC launches smallest GaN drive based on EPC33110 for robots and drones | ||
| 10.06. | EPC2378 25V, 410µO eGaN enters mass production for high-density DC-DC conversion | ||
| 10.06. | onsemi launches GaNEXUS gallium nitride power portfolio | ||
| 10.06. | Guerrilla RF expands focus on tactical radio market | ||
| 10.06. | Nexperia expands 650V industrial-grade high-power GaN FET portfolio | ||
| 10.06. | Nexperia brings QDPAK packaging to 1200 V SiC MOSFETs to overcome thermal bottlenecks in high-power designs |
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