DUBLIN, April 30, 2014 /PRNewswire/ --
Research and Markets (http://www.researchandmarkets.com/research/hhlgfs/infineon_coolmos) have announced the addition of the "Infineon CoolMOS C7 Technology Analysis" report to their offering.
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7th generation Superjunction MOSFET
The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.
The CoolMOSTM C7 offers a very low on-resistance (between 19m? and 225m?), and a fast switching speed, more than 100KHz. The C7 differs from the C6 via a new multi-epitaxy technology and an original contact solution.
The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing analysis is also available, for more information please click on the link below.
Key Topics Covered:
1. Overview / Introduction
2. Companies Profile
Infineon Profile
3. IPD65R225C7 Characteristics
IPD65R225C7 Characteristics
4. IPD65R225C7 Physical Analysis
Physical Analysis Methodology
Package Views & Dimensions
Package Cross-Section
Leadframe
MOSFET
Die View, Dimensions & Marking
Gate Supply Line
Guard Ring
Delayering
Metal Layers
Source and Gate
Source Cross-Section
Substrate and Epitaxy Layers
Superjunction Structure
Backside
MOSFET Characteristics
5. Manufacturing Process Flow
Global Overview
MOSFET Front end Unit
MOSFET Tests Unit
Transistor Process Flow
For more information visit http://www.researchandmarkets.com/research/hhlgfs/infineon_coolmos
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