WASHINGTON (dpa-AFX) - RF Micro Devices, Inc. (RFMD) Monday said it has secured a reference design win for its second-generation ultra-high efficiency family of power amplifiers. The company said the win is on a highly integrated multimode multi-band 3G/LTE solution.
Eric Creviston, president of RFMD's Cellular Products Group (CPG), said, 'We are excited to expand our relationship with this leading chipset supplier to include our ultra-high efficiency 3G/4G power amplifiers. RFMD is already supporting our mutual customers with high-performance 3G/4G switches and switch-based products, and we are enthusiastic about the incremental growth opportunities presented by our increasing participation on 3G and LTE reference designs.'
RFMD said its second-generation ultra-high efficiency 3G and 4G LTE PAs deliver an enhanced user experience by extending battery life and reducing the thermal impact of data usage in smartphones. The product family currently covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21 -- addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.
RFMD is currently trading at $4.9750, up $0.0550 or 1.12%, on the Nasdaq. Over the past year, the stock traded in a range of $4.41 - $7.89.
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