Anzeige
Mehr »
Login
Freitag, 03.05.2024 Börsentäglich über 12.000 News von 685 internationalen Medien
"Special Situation"-Aktie mit Multi-Tenbagger-Potenzial im heißesten Rohstoff-Markt
Anzeige

Indizes

Kurs

%
News
24 h / 7 T
Aufrufe
7 Tage

Aktien

Kurs

%
News
24 h / 7 T
Aufrufe
7 Tage

Xetra-Orderbuch

Fonds

Kurs

%

Devisen

Kurs

%

Rohstoffe

Kurs

%

Themen

Kurs

%

Erweiterte Suche
PR Newswire
64 Leser
Artikel bewerten:
(0)

Magneto Resistive RAM (MRAM) Market to Reach $4.8 Billion by 2025 - Analysis By Type, Application & Region - Research and Markets

DUBLIN, May 25, 2017 /PRNewswire/ --

Research and Markets has announced the addition of the "Magneto Resistive RAM (MRAM) Market Analysis By Type (Toggle, Spin-Transfer Torque), By Application (Consumer Electronics, Robotics, Automotive, Enterprise Storage, Aerospace), By Region, And Segment Forecasts, 2014 - 2025" report to their offering.

Logo

The global magneto resistive RAM (MRAM) market is expected to reach USD 4.80 billion by 2025.

Non-volatile memories, such as MRAM and Resistive random Access Memory (RRAM/ReRAM), are expected to replace the existing volatile memories such as Dynamic Random Access Memory (DRAM) and Static Random-Access Memory (static RAM or SRAM). The replacement would be possible due to different benefits offered by the advance non-volatile memories. The existing flash memories are facing technological limits; and their further advancements are expected to increase their costs, thus, leading to the invention of non-volatile memories that are capable of avoiding data loss on power discharge.

Moreover, the increasing demand of these memories is predicted to promote the demand for equipment, used in their manufacturing. The manufacturing of these memories require specialized fabrication equipment, similar to those used in magnetic read sensors. Thus, promoting the growth of capital equipment required for manufacturing of non-volatile memories equipment.

Companies Mentioned

  • Avalanche Technology, Inc.
  • Everspin Technologies, Inc.
  • Honeywell International, Inc.
  • Intel Corporation
  • NVE Corporation
  • Qualcomm Incorporated
  • Samsung Electronics CoLtd.
  • Spin Transfer Technologies
  • Toshiba Corporation
  • Crocus Nano Electronics LLC

Key Topics Covered:

1 Methodology and Scope

2 Executive Summary

3 Magneto Resistive RAM (MRAM) Market Variables, Trends, and Scope

4 Magneto Resistive RAM (MRAM) Market Type Outlook

5 Magneto Resistive RAM Market: Application Estimates & Trend Analysis

6 Magneto Resistive RAM Market: Regional Estimates & Trend Analysis

7 Competitive Landscape

For more information about this report visit http://www.researchandmarkets.com/research/w7zm9h/magneto_resistive

Media Contact:


Laura Wood, Senior Manager
press@researchandmarkets.com

For E.S.T Office Hours Call +1-917-300-0470
For U.S./CAN Toll Free Call +1-800-526-8630
For GMT Office Hours Call +353-1-416-8900

U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716

Kupfer - Jetzt! So gelingt der Einstieg in den Rohstoff-Trend!
In diesem kostenfreien Report schaut sich Carsten Stork den Kupfer-Trend im Detail an und gibt konkrete Produkte zum Einstieg an die Hand.
Hier klicken
© 2017 PR Newswire
Werbehinweise: Die Billigung des Basisprospekts durch die BaFin ist nicht als ihre Befürwortung der angebotenen Wertpapiere zu verstehen. Wir empfehlen Interessenten und potenziellen Anlegern den Basisprospekt und die Endgültigen Bedingungen zu lesen, bevor sie eine Anlageentscheidung treffen, um sich möglichst umfassend zu informieren, insbesondere über die potenziellen Risiken und Chancen des Wertpapiers. Sie sind im Begriff, ein Produkt zu erwerben, das nicht einfach ist und schwer zu verstehen sein kann.