New 650 V MOSFET for silicon carbide inverters

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor than with silicon carbide MOSFETs, and claims that the product reduces conduction losses by 50%, to offer potential power-density growth of 300%.CREE, a U.S. silicon carbide (SiC) technology developer, has unveiled its new Wolfspeed 605 V SiC metal-oxide-semiconductor field-effect transistor (MOSFET). It claims the new transistor is ideal for a broad range of industrial applications, including silicon ...

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