The demonstrated device, according to the academics, is built with interfaces between the active cell layers that improve the top cell carrier collection. The cell was built with texturing and a hydrogenated amorphous silicon (a-Si:H) passivation of a silicon back surface.A group of scientists from the University of Illinois at Urbana-Champaign and the Arizona State University in the United States has developed a III-V silicon epitaxial tandem solar cell based on gallium arsenide phosphide (GaAsP). It claims that the cell offers improved performance thanks to fewer defects at the interface between ...Den vollständigen Artikel lesen ...