Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials that is said to be able to achieve a wide spectral coverage. The cell was monolithically grown on gallium arsenide by molecular beam epitaxy (MBE).A group of scientists from the Tampere University in Finland has developed a III-V multi-junction solar cell which is claimed to have the potential for reaching a power conversion efficiency of close to 50%. Presented in the paper Wide spectral coverage (0.7-2.2 eV) lattice-matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials, ...Den vollständigen Artikel lesen ...
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