Researchers in Australia have compared the firing resistance of p-type and n-type poly-Si/SiOx passivating contacts and found that the former have better resistance to hydrogen diffusivity and higher passivation quality after firing.Researchers at the Australian National University (ANU) and the University of Melbourne have compared the firing stability of p-type and n-type passivating contacts based on polysilicon and silicon monoxide (SiOx), which are used in screen-printed solar cells to reduce carrier recombination at the metal/silicon interface. The scientists explained that the high-temperature ...Den vollständigen Artikel lesen ...
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