Mitsubishi Electric unveils power-switching transistor for solar

Mitsubishi Electric's new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial applications that need "middle-ground" power converters between DC1500 V and 3.3 kV.Japan's Mitsubishi Electric has unveiled a new IGBT module for applications in large-scale PV installations. The company claims the device helps to reduce the number of inverters needed in grid-connected PV installations, while providing for simultaneous high-voltage operation and low power losses. The 2.0kV LV100 ...

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