US scientists used spalled germanium instead of gallium arsenide, as the former reportedly reduces several issues associated with GaAs spalling. The cell achieved an open-circuit voltage of 1.019 V, a short-circuit current density of 28.49 mA cm-2, and a fill factor of 80.45%.Researchers from the US Department of Energy's National Renewable Energy Laboratory (NREL) have developed a III-V solar cell based on a substrate made of spalled germanium (Ge). They used spalled Ge instead of gallium arsenide (GaAs), as the former, which is commonly used in space applications, reportedly reduces several ...Den vollständigen Artikel lesen ...
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