A Spanish-Finnish research team has fabricated an IBC solar cell with an ultrathin black silicon wafer with a thickness of 40 µm. The device is based on vanadium oxide and laser-processed phosphorus-doped silicon carbide stacks as hole and electron transport layers, respectively.An international research team has sought to apply black silicon (bSi) to develop ultra-thin substrates for applications in interdigitated back-contact (IBC) solar cells. This kind of silicon offers the advantage of enabling the production of ultrathin and flexible wafers with lower impurity levels, which result in exceptional ...Den vollständigen Artikel lesen ...