Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products.Japanese electronics manufacturer Toshiba has introduced a new silicon carbide-based metal-oxide-semiconductor field-effect transistor (MOSFET) based on silicon carbide (SiC) for applications in solar inverters and battery storage systems. The company said the new MOSFET may help inverter manufacturers in reducing the size and weight of their products. "The higher frequency operation enables downsizing and ...Den vollständigen Artikel lesen ...