Soitec opens new plant, positioningSmartSiC
asafuture electric-vehicle standard
- Soitecinaugurates new production facility dedicated to SmartSiC substrates forfuturegenerations of electric vehicles
- Soitec's patented SmartCutTMtechnology allows each substrate to be used 10 times, reducing CO2 emissions during wafer manufacturing by 70%
- Launch of new plant is a key step in execution of Soitec's strategic plan, targeting a threefold increase in addressable markets by 2030
Bernin (Grenoble), France, 28 September2023 - Soitec (Euronext - Tech Leaders), a world leader in innovative semiconductor materials, today inaugurates its new plant in Bernin, near Grenoble, in the presence of Thierry Breton, European Commissioner for the Internal Market and Roland Lescure, French Minister Delegate for Industry.
Soitec has developed its SmartSiC technology as a response to vehicle electrification challenges.
The technology, based on silicon carbide (SiC), sets a new standard with improved efficiency for energy conversion systems. Thanks to its reduced energy losses, better thermal management and improved power density, the material increases the range and performance of electric vehicles.
Through the application of SmartCutTM technology, each SiC substrate can be used 10 times.
As a result, SmartSiCTM enables electric vehicles to achieve ranges above 500 km, compared with an average 350 km for vehicles using silicon IGBT1 alternatives - while also reducing CO2 emissions during wafer manufacturing by 70% compared to monocrystalline SiC substrates.
Development of the technology began in 2020 in partnership with CEA-Leti and has received financial support from the French state, the region, local authorities and the European Union.
A new production facility in step with Soitec's ambition
The new plant will have a 2,500 m2 footprint and a final production capacity of 500,000 SmartSiCTM wafers per year.
It will contribute to Soitec's strategy of sustainable growth towards a threefold expansion of addressable markets by 2030, reinforcing the company's leadership position in the strategic semiconductor materials market.
The new plant will lead to the creation of 400 direct jobs, while also reinforcing the attractiveness and dynamism of the "French Silicon Valley" ecosystem.
Pierre Barnabé, Chief Executive Officer of Soitec, stated: "More than ever we are ready to establish our SmartSiCTMtechnology as a new standard in semiconductor materials for coming generations of electric cars. This plant will enable us to meet growing demand for silicon carbide and achieve a 30% market shareby 2030, while helping to make electric mobility more efficient and affordable. Completedin record time, it is the embodiment of our industrial performance and our future-facing strategy, based on the expansion of our product and technology portfolio.
This is also an important day for our region, which is once again showing its dynamic and exemplary approach to industrial innovation, with technologies designed, developed, and manufactured within our ecosystem. We will create jobs and continue to showcase French and European knowhow in global semiconductor markets."
About Soitec
Soitec (Euronext - Tech Leaders), a world leader in innovative semiconductor materials, has been developing cutting-edge products delivering both technological performance and energy efficiency for over 30 years. From its global headquarters in France, Soitec is expanding internationally with its unique solutions, and generated sales of 1.1 billion Euros in fiscal year 2022-2023. Soitec occupies a key position in the semiconductor value chain, serving three main strategic markets: mobile communications, automotive and industrial, and smart devices. The company relies on the talent and diversity of its 2,100 employees, representing 50 different nationalities, working at its sites in Europe, the United States and Asia. Soitec has registered over 4,000 patents.
Soitec, SmartSiC and Smart Cut are registered trademarks of Soitec.
For more information: https://www.soitec.com/en/ and follow us on X: @Soitec Official
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1 IGBT: insulated-gate bipolar transistor
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