Fraunhofer ISE researchers utilized a new front metallization technique to produce a III-V gallium arsenide solar cell. For mask and plate front metallization, they used a new two-step printing scheme that reportedly allows for the realization of extremely narrow mask openings.Scientists at Germany's Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE) have fabricated a III-V gallium arsenide (GaAs) solar cell via a new front metallization process that is claimed to be scalable, low cost and efficient. The high cost of producing solar cells based on compounds of III-V element materials, ...Den vollständigen Artikel lesen ...