Researchers from Spain have developed a novel model to evaluate optical photovoltaic converters used in high-power optical transmission. They have found that indium gallium nitride (InGaN) and indium aluminum nitride (InAlN) semiconductors could provide better results than gallium arsenide (GaAs).Scientists from the University of Jaén and the University of Santiago de Compostela in Spain have conducted research to identify the most suitable semiconductor materials for high-power optical transmission (HPOT) in terrestrial and underwater environments. HPOT, also known as laser power transmission, ...Den vollständigen Artikel lesen ...