Longi, ANU develop gettering-based process to improve n-type wafer quality

The Chinese module maker and the Australian National University utilized phosphorus diffusion gettering and another defect mitigation strategy to improve the quality of n-type wafers. The proposed process contributed to improve the material quality especially towards the tail-ends. Researchers from Australian National University and Chinese PV module manufacturer Longi investigated the wafer quality of n-type industrial ingots made via the Recharged Czochralski (RCz) process, applying two defect mitigation strategies - Tabula Rasa (TR) and phosphorus diffusion gettering (PDG) - to further improve ...

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