The impact of impurity concentrations in gallium-doped p-type silicon ingots

The University of Konstanz and Chinese panel maker Longi have assessed the impact of gettering on LeTID in industrial Czochralski grown gallium-doped p-type silicon ingots and have found that defect density depends on impurity concentrations in the melt, which are observed in the case of interstitial iron concentrations. A group of researchers from the University of Konstanz in Germany and Chinese solar module manufacturer Longi have investigated the impact of impurity concentrations caused by gettering on the long-term stability of charge carrier lifetime in recharged Czochralski-grown silicon ...

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