Fraunhofer ISE streamlines use of epitaxial wafers in TOPCon solar cell manufacturing

Researchers at the German research institute have demonstrated that the so-called EpiWafers could be used directly for solar cell fabrication without needing a pre-gettering step. For their experiment, they used epitaxially grown silicon wafers from German wafer manufacturer NexWafe GmbH. A research group at Germany's Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE) has shown that in situ gettering during the application of asymmetric configuration of n-type and p-type tunnel oxide passivating contact (TOPCon) layers increases the material quality of n-type epitaxially grown silicon ...

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