The team produced a 16. 53% inverted 1. 08 cm2 perovskite solar cell using atomic layer deposition to apply a buffering layer of tin oxide to prevent electrode sputtering damage. A research team from the Indian Institute of Technology Bombay has demonstrated an atomic layer deposition (ALD) method within a lower temperature process to apply a buffering layer of tin oxide (SnOx) thin film to protect perovskite and transport layers from damage during the transparent conducting oxide sputtering process. Sputtered transparent conducting oxide (TCO) is used to enable perovskite tandem and bifacial ...Den vollständigen Artikel lesen ...
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