New model for LeTID prediction in gallium doped silicon wafers

Researchers at Fraunhofer Institute for Solar Energy Systems in Germany developed a predictive model for light and elevated temperature induced degradation in gallium-doped silicon wafer that includes the effects of temporary recovery.A team led by researchers at Germany-based Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE) has developed a parametric predictive model for light and elevated temperature-induced degradation (LeTID) in gallium-doped silicon wafers that includes the kinetics of the temporary recovery effect. "We specifically investigated the kinetics of temporary recovery ...

Den vollständigen Artikel lesen ...